Name: TW107N65C,S1F
Brand: Toshiba Semiconductor and Storage
SKU: 264-TW107N65CS1F-ND
Price: 12.505 EUR
Availability: InStock

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TW107N65C,S1F
cms-digikey-product-number	264-TW107N65CS1F-ND
cms-manufacturer	Toshiba Semiconductor and Storage
cms-manufacturer-product-number	TW107N65C,S1F
cms-description	G3 650V SIC-MOSFET TO-247 107MO
cms-standard-lead-time	24 Weeks
cms-customer-reference
cms-detailed-description	N-Channel 650 V 20A (Tc) 76W (Tc) Through Hole TO-247
Datasheet	Datasheet

cms-product-attributes

cms-type	cms-description	cms-select-all
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	145mOhm @ 10A, 18V
Vgs(th) (Max) @ Id	5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 18 V
Vgs (Max)	+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds	600 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	76W (Tc)
Operating Temperature	175°C
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-247
Package / Case	TO-247-3