Name: TW045N120C,S1F
Brand: Toshiba Semiconductor and Storage
SKU: 264-TW045N120CS1F-ND
Price: 29.7802 EUR
Availability: InStock

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TW045N120C,S1F
cms-digikey-product-number	264-TW045N120CS1F-ND
cms-manufacturer	Toshiba Semiconductor and Storage
cms-manufacturer-product-number	TW045N120C,S1F
cms-description	G3 1200V SIC-MOSFET TO-247 45MO
cms-standard-lead-time	24 Weeks
cms-customer-reference
cms-detailed-description	N-Channel 1200 V 40A (Tc) 182W (Tc) Through Hole TO-247
Datasheet	Datasheet

cms-product-attributes

cms-type	cms-description	cms-select-all
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	59mOhm @ 20A, 18V
Vgs(th) (Max) @ Id	5V @ 6.7mA
Gate Charge (Qg) (Max) @ Vgs	57 nC @ 18 V
Vgs (Max)	+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds	1969 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	182W (Tc)
Operating Temperature	175°C
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-247
Package / Case	TO-247-3