Diode 650 V 10A Through Hole TO-220-2L
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TRS10E65H,S1Q

DigiKey Part Number
264-TRS10E65H,S1Q-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TRS10E65H,S1Q
Description
DIODE SIL CARB 650V 10A TO220L
Manufacturer Standard Lead Time
24 Weeks
Customer Reference
Detailed Description
Diode 650 V 10A Through Hole TO-220-2L
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Toshiba Semiconductor and Storage
Series
-
Packaging
Tube
Part Status
Active
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
10A
Voltage - Forward (Vf) (Max) @ If
1.35 V @ 10 A
Speed
Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
100 µA @ 650 V
Capacitance @ Vr, F
649pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Supplier Device Package
TO-220-2L
Operating Temperature - Junction
175°C
Product Questions and Answers

See what engineers are asking, ask your own questions, or help out a member of the DigiKey engineering community

In-Stock: 116
Check for Additional Incoming Stock
Quantity
All prices are in EUR
Tube
QuantityUnit PriceExt Price
1€4.35000€4.35
50€2.24780€112.39
100€2.04400€204.40
500€1.68726€843.63
1,000€1.57271€1,572.71
2,000€1.47644€2,952.88
5,000€1.44258€7,212.90
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:€4.35000
Unit Price with VAT:€5.30700