Name: TK090E65Z,S1X
Brand: Toshiba Semiconductor and Storage
SKU: 264-TK090E65ZS1X-ND
Price: 7.137 EUR
Availability: InStock

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TK090E65Z,S1X
cms-digikey-product-number	264-TK090E65ZS1X-ND
cms-manufacturer	Toshiba Semiconductor and Storage
cms-manufacturer-product-number	TK090E65Z,S1X
cms-description	650V DTMOS VI TO-220 90MOHM
cms-standard-lead-time	16 Weeks
cms-customer-reference
cms-detailed-description	N-Channel 650 V 30A (Ta) 230W (Tc) Through Hole TO-220
Datasheet	Datasheet

cms-product-attributes

cms-type	cms-description	cms-select-all
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	30A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	90mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	4V @ 1.27mA
Gate Charge (Qg) (Max) @ Vgs	47 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2780 pF @ 300 V
FET Feature	-
Power Dissipation (Max)	230W (Tc)
Operating Temperature	150°C
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3