GT50JR22(STA1,E,S)
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GT50JR22(STA1,E,S)

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264-GT50JR22(STA1ES)-ND
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GT50JR22(STA1,E,S)
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IGBT 600V 50A TO-3P
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12 Weeks
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IGBT 600 V 50 A 230 W Through Hole TO-3P(N)
Datasheet
 Datasheet
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Manufacturer
Toshiba Semiconductor and Storage
Series
-
Packaging
Tube
Part Status
Active
IGBT Type
-
Voltage - Collector Emitter Breakdown (Max)
600 V
Current - Collector (Ic) (Max)
50 A
Current - Collector Pulsed (Icm)
100 A
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 50A
Power - Max
230 W
Switching Energy
-
Input Type
Standard
Td (on/off) @ 25°C
-
Test Condition
-
Operating Temperature
175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Supplier Device Package
TO-3P(N)
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In-Stock: 4
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Tube
cms-quantityUnit Pricecms-ext-price
1€5.65000€5.65
25€3.31840€82.96
100€2.76250€276.25
500€2.35898€1,179.49
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Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:€5.65000
Unit Price with VAT:€6.89300