Name: IXTY1R6N100D2
Brand: IXYS
SKU: 238-IXTY1R6N100D2-ND
Price: 4.88 EUR
Availability: InStock

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IXTY1R6N100D2
cms-digikey-product-number	238-IXTY1R6N100D2-ND
cms-manufacturer	IXYS
cms-manufacturer-product-number	IXTY1R6N100D2
cms-description	MOSFET N-CH 1000V 1.6A TO252
cms-standard-lead-time	32 Weeks
cms-customer-reference
cms-detailed-description	N-Channel, Depletion Mode 1000 V 1.6A (Tc) 100W (Tc) Surface Mount TO-252AA
Datasheet	Datasheet
cms-eda-cad-models	IXTY1R6N100D2 Models

cms-product-attributes

cms-type	cms-description	cms-select-all
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	IXYS
Series	Depletion
Packaging	Tube
Part Status	Active
FET Type	N-Channel, Depletion Mode
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000 V
Current - Continuous Drain (Id) @ 25°C	1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	10Ohm @ 800mA, 0V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	27 nC @ 5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	645 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	100W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	TO-252AA
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number	IXTY1