Name: IRFP4227PBFXKMA1
Brand: Infineon Technologies
SKU: 448-IRFP4227PBFXKMA1-ND
Price: 4.5994 EUR
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IRFP4227PBFXKMA1
DigiKey Part Number	448-IRFP4227PBFXKMA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IRFP4227PBFXKMA1
Description	TRENCH >=200V
Manufacturer Standard Lead Time	26 Weeks
Customer Reference
Detailed Description	N-Channel 200 V 65A (Tc) 330W (Tc) Through Hole PG-TO247-3-901
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	HEXFET®
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	25mOhm @ 46A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	98 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	4600 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	330W (Tc)
Operating Temperature	-40°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3-901
Package / Case	TO-247-3