Name: IPB60R280P7ATMA1
Brand: Infineon Technologies
SKU: IPB60R280P7ATMA1TR-ND
Price: 2.806 EUR
Availability: InStock

IPB60R280P7ATMA1
cms-digikey-product-number	IPB60R280P7ATMA1TR-ND - Tape & Reel (TR) IPB60R280P7ATMA1CT-ND - Cut Tape (CT) IPB60R280P7ATMA1DKR-ND - Digi-Reel®
cms-manufacturer	Infineon Technologies
cms-manufacturer-product-number	IPB60R280P7ATMA1
cms-description	MOSFET N-CH 600V 12A D2PAK
cms-standard-lead-time	17 Weeks
cms-customer-reference
cms-detailed-description	N-Channel 600 V 12A (Tc) 53W (Tc) Surface Mount PG-TO263-3
cms-datasheet	cms-datasheet
cms-eda-cad-models	IPB60R280P7ATMA1 Models

cms-type	cms-description	cms-select-all
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	CoolMOS™ P7
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	280mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id	4V @ 190µA
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	761 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	53W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number	IPB60R280

Unit Price without VAT:	€2.30000
Unit Price with VAT:	€2.80600

IPB60R280P7ATMA1