N-Channel 750 V 89A (Tj) 319W (Tc) Through Hole PG-TO247-4
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IMZA75R016M1HXKSA1

DigiKey Part Number
448-IMZA75R016M1HXKSA1-ND
Manufacturer
Manufacturer Product Number
IMZA75R016M1HXKSA1
Description
SILICON CARBIDE MOSFET
Customer Reference
Detailed Description
N-Channel 750 V 89A (Tj) 319W (Tc) Through Hole PG-TO247-4
Datasheet
 Datasheet
Product Attributes
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Category
Vgs(th) (Max) @ Id
5.6V @ 14.9mA
Mfr
Gate Charge (Qg) (Max) @ Vgs
81 nC @ 18 V
Series
Vgs (Max)
+23V, -5V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
2869 pF @ 500 V
Part Status
Not For New Designs
Power Dissipation (Max)
319W (Tc)
FET Type
Operating Temperature
-55°C ~ 175°C (TJ)
Technology
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
750 V
Supplier Device Package
PG-TO247-4
Current - Continuous Drain (Id) @ 25°C
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
15V, 20V
Base Product Number
Rds On (Max) @ Id, Vgs
15mOhm @ 41.5A, 20V
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
In-Stock: 39
Check for Additional Incoming Stock
Not recommended for new design, minimums may apply
All prices are in EUR
Tube
QuantityUnit PriceExt Price
1€18.33000€18.33
30€11.52467€345.74
120€10.03633€1,204.36
510€9.69790€4,945.93
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:€18.33000
Unit Price with VAT:€22.36260