Name: AIMBG75R007M2HXTMA1
Brand: Infineon Technologies Americas Corp.
SKU: 448-AIMBG75R007M2HXTMA1TR-ND
Price: 37.1124 EUR
Availability: InStock

New Product

N-Channel 750 V 198A (Tc) 651W (Tc) Surface Mount PG-TO263-7-12

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

AIMBG75R007M2HXTMA1
DigiKey Part Number	448-AIMBG75R007M2HXTMA1TR-ND - Tape & Reel (TR) 448-AIMBG75R007M2HXTMA1CT-ND - Cut Tape (CT) 448-AIMBG75R007M2HXTMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies Americas Corp.
Manufacturer Product Number	AIMBG75R007M2HXTMA1
Description	AIMBG75R007M2HXTMA1
Manufacturer Standard Lead Time	61 Weeks
Customer Reference
Detailed Description	N-Channel 750 V 198A (Tc) 651W (Tc) Surface Mount PG-TO263-7-12
Datasheet	Datasheet
EDA/CAD Models	AIMBG75R007M2HXTMA1 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies Americas Corp.
Series	CoolSiC™
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	750 V
Current - Continuous Drain (Id) @ 25°C	198A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V, 20V
Rds On (Max) @ Id, Vgs	6.3mOhm @ 129.7A, 20V
Vgs(th) (Max) @ Id	5.6V @ 28.5mA
Gate Charge (Qg) (Max) @ Vgs	169 nC @ 18 V
Vgs (Max)	+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds	5854 pF @ 500 V
FET Feature	-
Power Dissipation (Max)	651W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-7-12
Package / Case	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA