RFW2N06RLE Harris Corporation | Single FETs, MOSFETs

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RFW2N06RLE
DigiKey Part Number	2156-RFW2N06RLE-ND
Manufacturer	Harris Corporation
Manufacturer Product Number	RFW2N06RLE
Description	N-CHANNEL POWER MOSFET
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Detailed Description	N-Channel 60 V 2A (Tc) 1.09W (Tc) Through Hole 4-DIP, Hexdip
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 2V @ 250µA
Mfr Harris Corporation	Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Packaging Bulk	Vgs (Max) +10V, -5V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 535 pF @ 25 V
FET Type N-Channel	Power Dissipation (Max) 1.09W (Tc)
Technology MOSFET (Metal Oxide)	Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 60 V	Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25°C 2A (Tc)	Supplier Device Package 4-DIP, Hexdip
Drive Voltage (Max Rds On, Min Rds On) 5V	Package / Case 4-DIP (0.300", 7.62mm)
Rds On (Max) @ Id, Vgs 200mOhm @ 2A, 5V

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RFW2N06RLE