Nexperia

60 V, N-Channel Trench MOSFET

Nexperia's 60 V, N-channel trench MOSFETs feature electrostatic-discharge (ESD) protection of 2 kV HBM

Image of NXP Semiconductor's 60 V N-Channel Trench MOSFETNexperia's BSN20BKR is an N-channel, enhancement-mode field-effect transistor (FET) in a small, SOT23 (TO-236AB), surface-mounted device (SMD), plastic package using trench MOSFET technology.

Benefits
  • Logic-level compatible
  • Electrostatic-discharge (ESD) protection of 2 kV HBM
  • Very-fast switching
  • Trench MOSFET technology
Applications
  • High-speed line drivers
  • Low-side load switches
  • Relay drivers
  • Switching circuits

60 V N-Channel Trench MOSFET

ImageManufacturer Part NumberDescriptionDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CAvailable QuantityPrice
MOSFET N-CH 60V 265MA TO236ABBSN20BKRMOSFET N-CH 60V 265MA TO236AB60 V265mA (Ta)0 - Immediate$0.22View Details
Updated: 2017-08-08
Published: 2015-09-24