SICWT40120G6M 1200 V Silicon Carbide Schottky Diode

The Micro Commercial Components (MCC) SICWT40120G6M is a high-performance 1200 V silicon carbide Schottky diode engineered for high-power, high-efficiency switching applications. Housed in the robust TO-247AD package, this device is optimized for demanding power systems requiring strong thermal capability, minimal switching losses, and reliable operation under extreme conditions.

Built using advanced merged PiN Schottky (MPS) technology, the SICWT40120G6M combines the fast-switching characteristics of Schottky diodes with improved leakage control and surge robustness. With up to 90 A continuous forward current capability, 330 A surge rating, forward voltage of 1.65 V at +25°C, leakage current as low as 1 µA, and operation up to +175°C junction temperature, it enables designers to increase system efficiency, reduce thermal requirements, and improve power density in industrial, traction, and energy applications.

Features

• Merged PiN Schottky (MPS) technology, delivering low leakage, strong surge robustness, and fast switching performance
• Zero reverse recovery current, eliminating recovery losses and improving high-frequency efficiency
• High current capability of I_F = 90 A and I_FSM = 330 A at +25°C, supporting demanding power conversion and motor drive stages
• 1200 V V_RRM rating, suitable for high-voltage rectification and power architectures
• Low forward voltage (V_F = 1.65 V @ +25°C), minimizing conduction losses and heat generation
• Low leakage current (I_R ≤ 25 µA @ +25°C) for stable high-temperature performance
• Wide junction temperature range -55°C to +175°C, enabling high-temperature system design
• Positive temperature coefficient, helping prevent thermal runaway
• Epoxy compliant with UL 94 V-0 flammability standard
• Halogen-free and RoHS compliant, meeting global environmental requirements