Single IGBTs

Results: 7
Product Status
ActiveObsolete
Voltage - Collector Emitter Breakdown (Max)
650 V1200 V
Current - Collector (Ic) (Max)
30 A50 A80 A100 A
Current - Collector Pulsed (Icm)
60 A100 A120 A160 A180 A200 A
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 15A2.3V @ 15V, 40A2.4V @ 15V, 25A2.4V @ 15V, 40A2.4V @ 15V, 50A2.4V @ 15V, 60A
Power - Max
48 W230 W341 W348 W357 W375 W428 W
Switching Energy
270µJ (on), 86µJ (off)500µJ (on), 400µJ (off)770µJ (on), 550µJ (off)920µJ (on), 530µJ (off)1.15mJ (on), 350µJ (off)1.44mJ (on), 550µJ (off)1.96mJ (on), 540µJ (off)
Gate Charge
60 nC61 nC95 nC204 nC219 nC287 nC341 nC
Td (on/off) @ 25°C
6ns/55ns19ns/128ns42ns/142ns58ns/245ns58ns/328ns65ns/308ns73ns/269ns
Test Condition
400V, 15A, 10Ohm, 15V400V, 40A, 10Ohm, 15V400V, 40A, 7.9Ohm, 15V400V, 50A, 7.9Ohm, 15V400V, 60A, 7Ohm, 15V600V, 25A, 23Ohm, 15V600V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)
60 ns80 ns100 ns145 ns150 ns205 ns
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 175°C (TJ)
Package / Case
TO-220-3 Full Pack, Isolated TabTO-247-3
Supplier Device Package
ITO-220ABTO-247
Stocking Options
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Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
IGBT Type
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
DGTD65T15H2TF
DGTD65T15H2TF
IGBT FIELD STP 650V 30A ITO220AB
Diodes Incorporated
1,000
In Stock
1 : €1.78000
Tube
-
Tube
ActiveField Stop650 V30 A60 A2V @ 15V, 15A48 W270µJ (on), 86µJ (off)Standard61 nC19ns/128ns400V, 15A, 10Ohm, 15V150 ns-40°C ~ 175°C (TJ)Through HoleTO-220-3 Full Pack, Isolated TabITO-220AB
TO-247-3
DGTD120T25S1PT
IGBT 1200V-X TO247 TUBE 0.45K
Diodes Incorporated
447
In Stock
82,350
Factory
1 : €7.20000
Tube
-
Tube
ActiveField Stop1200 V50 A100 A2.4V @ 15V, 25A348 W1.44mJ (on), 550µJ (off)Standard204 nC73ns/269ns600V, 25A, 23Ohm, 15V100 ns-40°C ~ 175°C (TJ)Through HoleTO-247-3TO-247
TO-247-3
DGTD120T40S1PT
IGBT 1200V-X TO247 TUBE 0.45K
Diodes Incorporated
0
In Stock
Obsolete
-
Tube
ObsoleteField Stop1200 V80 A160 A2.4V @ 15V, 40A357 W1.96mJ (on), 540µJ (off)Standard341 nC65ns/308ns600V, 40A, 10Ohm, 15V100 ns-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
TO-247-3
DGTD65T40S1PT
IGBT 600V-X TO247 TUBE 0.45K
Diodes Incorporated
0
In Stock
Active
-
Tube
ActiveField Stop650 V80 A160 A2.4V @ 15V, 40A341 W1.15mJ (on), 350µJ (off)Standard219 nC58ns/245ns400V, 40A, 7.9Ohm, 15V145 ns-40°C ~ 175°C (TJ)Through HoleTO-247-3TO-247
TO-247-3
DGTD65T40S2PT
IGBT 600V-X TO247 TUBE 0.45K
Diodes Incorporated
0
In Stock
Obsolete
-
Tube
ObsoleteField Stop650 V80 A120 A2.3V @ 15V, 40A230 W500µJ (on), 400µJ (off)Standard60 nC6ns/55ns400V, 40A, 10Ohm, 15V60 ns-40°C ~ 175°C (TJ)Through HoleTO-247-3TO-247
TO-247-3
DGTD65T50S1PT
IGBT 600V-X TO247 TUBE 0.45K
Diodes Incorporated
0
In Stock
Obsolete
-
Tube
ObsoleteField Stop650 V100 A200 A2.4V @ 15V, 50A375 W770µJ (on), 550µJ (off)Standard287 nC58ns/328ns400V, 50A, 7.9Ohm, 15V80 ns-40°C ~ 175°C (TJ)Through HoleTO-247-3TO-247
TO-247-3
DGTD65T60S2PT
IGBT 600V-X TO247 TUBE 0.45K
Diodes Incorporated
0
In Stock
Obsolete
-
Tube
ObsoleteField Stop650 V100 A180 A2.4V @ 15V, 60A428 W920µJ (on), 530µJ (off)Standard95 nC42ns/142ns400V, 60A, 7Ohm, 15V205 ns-40°C ~ 175°C (TJ)Through HoleTO-247-3TO-247
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Single IGBTs


Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.