MBRB15H45CT Datasheet by Vishay General Semiconductor - Diodes Division

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MBRB15H45CT
www.vishay.com Vishay General Semiconductor
Revision: 26-Sep-2018 1Document Number: 88782
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual Common Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
DESIGN SUPPORT TOOLS
FEATURES
• Power pack
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3_A
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, and polarity protection application.
MECHANICAL DATA
Case: D2PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code, e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity: as marked
PRIMARY CHARACTERISTICS
IF(AV) 2 x 7.5 A
VRRM 45 V
IFSM 150 A
VF0.55 V
IR50 μA
TJ max. 175 °C
Package D2PAK (TO-263AB)
Circuit configuration Common cathode
D2PAK (TO-263AB)
PIN 1
PIN 2
K
HEATSINK
1
2
K
MBRB15H45CT
click logo to get started
Available
Models
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL MBRB15H45CT UNIT
Maximum repetitive peak reverse voltage VRRM 45
VWorking peak reverse voltage VRWM 45
Maximum DC blocking voltage VDC 45
Maximum average forward rectified current (fig. 1) total device IF(AV)
15 A
per diode 7.5
Non-repetitive avalanche energy at 25 °C, IAS = 4 A, L = 10 mH per diode EAS 80 mJ
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated
load per diode IFSM 150 A
Peak repetitive reverse surge current per diode at tp = 2.0 μs, 1 kHz IRRM 1.0
Peak non-repetitive reverse energy (8/20 μs waveform) ERSM 20 mJ
Electrostatic discharge capacitor voltage
Human body model: C = 100 F, R = 1.5 kVC25 kV
Voltage rate of change (rated VR) dV/dt 10 000 V/μs
Operating junction and storage temperature range TJ, TSTG -65 to +175 °C
VISHAY. DwodesAmencas@\/wshay.com DwodesAswa@\/wshay.com DwodesEuvogemusnauom www.v\shay.com/doc?91000
MBRB15H45CT
www.vishay.com Vishay General Semiconductor
Revision: 26-Sep-2018 2Document Number: 88782
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: pulse width 40 ms
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (TC = 25 °C unless otherwise noted)
Fig. 1 - Forward Derating Curve Per Diode Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MBRB15H45CT UNIT
TYP. MAX.
Maximum instantaneous forward voltage per
diode VF (1)
IF = 7.5 A TJ = 25 °C - 0.63
V
IF = 7.5 A TJ = 125 °C 0.50 0.55
IF = 15 A TJ = 25 °C - 0.75
IF = 15 A TJ = 125 °C 0.61 0.66
Maximum reverse current per diode IR (2) Rated VR
TJ = 25 °C - 50 μA
TJ = 125 °C 3.0 10 mA
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL MBRB15H45CT UNIT
Maximum thermal resistance per diode RJC 3.0 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-263AB MBRB15H45CTHE3_B/P (1) 1.35 P 50/tube Tube
TO-263AB MBRB15H45CTHE3_B/I (1) 1.35 I 800/reel Tape and reel
0
0
5
10
15
20
25 50 75 100 125 150 175
Average Forward Current (A)
Case Temperature (°C)
101 100
25
50
75
100
125
150
175
T
J
= T
J
max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
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MBRB15H45CT
www.vishay.com Vishay General Semiconductor
Revision: 26-Sep-2018 3Document Number: 88782
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.01
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0
1
10
100
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
Instantaneous Forward Voltage (V)
)A( tn
err
u
C
drawro
F suo
enat
n
atsnI
0600010480
0.0001
0.001
0.1
0.01
1
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
Percent of Rated Peak Reverse Voltage (%)
ka
eL esre
veR suoe
natnatsnIega
)Am( tne
rruC
20
1001011.0
100
1000
10
1
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
Reverse Voltage (V)
)Fp( ecnaticap
aC n
o
itcnuJ
0.01 0.1
0.1
1
1
10
10
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
D2PAK (TO-263AB) Mounting Pad Layout
0.670 (17.02)
0.591 (15.00)
0.105 (2.67)
0.095 (2.41)
0.08 (2.032) MIN.
0.15 (3.81) min.
0.33 (8.38) min.
0.42 (10.66) min.
12
K
K
0.140 (3.56)
0.110 (2.79)
0.021 (0.53)
0.014 (0.36)
0.110 (2.79)
0.090 (2.29)
0 to 0.01 (0 to 0.254)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
0.190 (4.83)
0.160 (4.06)
0.205 (5.20)
0.195 (4.95)
0.624 (15.85)
0.591 (15.00)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.360 (9.14)
0.320 (8.13)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
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